-40%
1PCS MRF6V2150NBR1 RF Power Field Effect Transistors 10 to 450MHz 150W
$ 50.16
- Description
- Size Guide
Description
Part No. : MRF6V2150NBR1Description : 10 to 450MHz , 150W AVG , 50V , TO-270 WB-4,
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pout = 150 Watts
Power Gain ó 25 dB
Drain Efficiency ó 68.3%
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large--Signal Impedance Parameters
• Qualified Up to a Maximum of 50 VDD Operation
• Integrated ESD Protection
• 225°C Capable Plastic Package
• RoHS Compliant
Maker: FREESCALE [Freescale Semiconductor, Inc]
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