1PCS RA55H3340M MITSUBISHI RF MOSFET MODULE 3 Stage Amp. For MOBILE RADIO

Description

Part No.  :   RA55H3340M
Description :
RoHS Compliance, 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
DESCRIPTION
The RA55H3340M is a 55-watt RF MOSFET Amplifier
Module for 12.5-volt mobile radios that operate in the 330- to
400-MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (VGG=0V), only a small leakage current flows into the
drain and the RF input signal attenuates up to 60 dB. The
output power and drain current increase as the gate voltage
increases. With a gate voltage around 4V (minimum), output
power and drain current increases substantially. The nominal
output power becomes available at 4.5V (typical) and 5V
(maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but
may also be used for linear modulation by setting the drain
quiescent current with the gate voltage and controlling the
output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>55W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 330-400MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain
current with the gate voltage and controlling the output power
with the input power
Maker：Mitsubishi
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